NCE55H12 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current <.
GENERAL FEATURES
* VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
* High density cell design for ultr.
The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
* High de.
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